Effect of external electric field on the electronic and magnetic properties of doped silicon carbide nanotubes: DFT

In this study, we investigate the effect of a bidirectional external electric field on doped silicon carbide nanotubes. We doped the nanotubes with different transition metals such as Ag, Co, and Zn atoms to study the electronic and magnetic properties under the influence of an external electric field. The results show a significant decrease in the energy gap upon increasing the external electric field. In addition, the high external electric field is found to induce an unexpected deformation in the nanotube structure. Therefore, cases beyond 0.7 eV/?/e are excluded. However, the observed deformation upon applying an electric field below 0.7 eV/?/e is insignificant and does not affect the bond lengths. Finally, the magnetic moment of Ag and Co-doped silicon carbide nanotubes is significantly influenced by modifying the values of the external electric field without any clear trend. However, Zn-doped silicon carbide nanotubes exhibit almost no magnetic properties upon applying a transverse electric field